stem/Semiconductors/Equations.md

R=\frac{\rho L}{A}

• R = Resistance
• \rho = Resistivity (\Omega cm)
• L = Length
• A = CS Area

J=\sigma E

• J = Current Density
• \sigma = Conductivity (\frac{1}{\Omega cm})
• E = Electric Field

V_{bi} = \frac{kT}{q}ln(\frac{N_D N_A}{n_i^2})

• V_{bi} = Built-in Potential Doping

J=nev

• n = Charge Density
• e = Charge
• v = Drift Velocity

v=\mu E

• v = Drift Velocity
• \mu = Mobility
• E = Electric Field

\sigma = ne\mu

\rho=\frac{1}{\sigma}

\sigma=q(\mu_nn+\mu_pp)

• q = Electronic Charge
• \mu = Carrier Mobility (\frac{cm^2}{Vs})

1 eV = 1.602\times 10^{-19}J