83 lines
4.6 KiB
BibTeX
83 lines
4.6 KiB
BibTeX
@article{ieee_s6824198,
|
||
abstract = "<p>Quantum well infrared photodetectors (QWIPs) are known for their stability, high pixel-to-pixel uniformity, and high-pixel operability, which are essential for large area imaging arrays. In this paper, we discuss the initial demonstration of QWIP devices, and the many years of progress that propelled this technology toward the demonstration of large format focal plane arrays. In addition, we present some potential applications of this technology in science and medicine.</p>",
|
||
author = "Gunapala, Sarath D and Bandara, Sumith V and Liu, John K and Mumolo, Jason M and Rafol, Sir B and Ting, David Z and Soibel, Alexander and Hill, Cory",
|
||
issn = "1077-260X",
|
||
journal = "IEEE Journal of Selected Topics in Quantum Electronics",
|
||
keywords = "Detectors ; Noise ; Gallium Arsenide ; Absorption ; Cameras ; Dark Current ; Engineering ; Physics",
|
||
language = "eng",
|
||
number = "6",
|
||
pages = "154,165",
|
||
publisher = "IEEE",
|
||
title = "Quantum Well Infrared Photodetector Technology and Applications",
|
||
volume = "20",
|
||
year = "2014-11"
|
||
}
|
||
|
||
@misc{new_semiconductor_materials_archive,
|
||
title={NSM Archive - Physical Properties of Semiconductors},
|
||
url={http://matprop.ru/},
|
||
journal={New Semiconductor Materials Archive},
|
||
publisher={Ioffe Institute}
|
||
}
|
||
|
||
@article{aip_complete10.1063/1.322570,
|
||
abstract = "Very uniform In 0.53 Ga 0.47 As was grown on InP by liquid phase epitaxy. The electron mobility is 8450 cm 2 /V sec at 300 K and 27700 cm 2 /V sec at 77 K. The mobility increases with decreasing temperature from 300 to 77 K in contrast to the results of In 1− x Ga x As grown directly on GaAs by vapor phase epitaxy. The energy gap of this high‐mobility material is 0.750 eV at room temperature.",
|
||
author = "Takeda, Yoshikazu and Sasaki, Akio and Imamura, Yujiro and Takagi, Toshinori",
|
||
issn = "0021-8979",
|
||
journal = "Journal of Applied Physics",
|
||
language = "eng",
|
||
number = "12",
|
||
pages = "5405,5408",
|
||
publisher = "American Institute of Physics",
|
||
title = "Electron mobility and energy gap of In 0.53 Ga 0.47 As on InP substrate",
|
||
volume = "47",
|
||
year = "1976-12",
|
||
}
|
||
|
||
@article{aip_complete10.1063/1.90860,
|
||
abstract = "The band-edge effective mass for conduction electrons in Ga x In 1-x As y P 1-y has been determined for several different alloy compositions covering the complete range of alloys grown lattice-matched on InP. Measurements show that the effective mass varies nearly linearly with alloy composition.",
|
||
author = "Nicholas, R. J. and Portal, J. C. and Houlbert, C. and Perrier, P. and Pearsall, T. P.",
|
||
issn = "0003-6951",
|
||
journal = "Applied Physics Letters",
|
||
keywords = "Galliumarsenid ; Drei-Fuenf-Verbindung ; Indiumphosphid ; Effektive Masse;",
|
||
language = "eng",
|
||
number = "8",
|
||
pages = "492,494",
|
||
publisher = "American Institute of Physics",
|
||
title = "An experimental determination of the effective masses for Ga x In 1-x As y P 1-y alloys grown on InP",
|
||
volume = "34",
|
||
year = "1979",
|
||
}
|
||
|
||
@article{aip_complete10.1063/1.92393,
|
||
abstract = "We report the use of optical pumping in p -type Ga x In 1-x As y P 1-y nearly lattice-matched to InP. Analysis of the conduction‐electron spin‐polarized photoluminescence has been used to deduce the valence‐band light‐hole effective mass as a function of alloy composition. Our results are in good agreement with masses calculated using the k·p approximation.",
|
||
author = "Hermann, Claudine and Pearsall, Thomas P.",
|
||
issn = "0003-6951",
|
||
journal = "Applied Physics Letters",
|
||
keywords = "Halbleiterverbindung ; Galliumarsenid ; Indiumphosphid ; A3-B5-Verbindung ; Optisches Pumpen ; Effektive Masse ; Defektelektron ; Valenzband ; Halbleitersubstrat ; P-Halbleiter ; Leitungselektron ; Photolumineszenz ; Spinorientierung;",
|
||
language = "eng",
|
||
number = "6",
|
||
pages = "450,452",
|
||
publisher = "American Institute of Physics",
|
||
title = "Optical pumping and the valence-band light-hole effective mass in Ga x In 1-x As y P 1-y (y approx. 2.2x)",
|
||
volume = "38",
|
||
year = "1981",
|
||
}
|
||
|
||
@article{aip_complete10.1063/1.101816,
|
||
author = "Lin, S. Y. and Liu, C. T. and Tsui, D. C. and Jones, E. D. and Dawson, L. R.",
|
||
issn = "0003-6951",
|
||
journal = "Applied Physics Letters",
|
||
keywords = "Materials Sciencegallium Arsenides ; Holes ; Indium Arsenides ; Cyclotron Resonance ; Effective Mass ; Electronic Structure ; Light Transmission ; Superlattices ; Arsenic Compounds ; Arsenides ; Gallium Compounds ; Indium Compounds ; Mass ; Pnictides ; Resonance;",
|
||
language = "eng",
|
||
number = "7",
|
||
pages = "666,668",
|
||
publisher = "American Institute of Physics",
|
||
title = "Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In 0.20 Ga 0.80 As/GaAs",
|
||
volume = "55",
|
||
year = "1989-08-14",
|
||
}
|
||
|
||
|
||
|