diff --git a/coursework.lyx b/coursework.lyx
index 4a6fd4a..46dacb9 100644
--- a/coursework.lyx
+++ b/coursework.lyx
@@ -91,11 +91,11 @@ EEE3037 Nanotechnology Coursework
6420013
\end_layout
-\begin_layout Section
+\begin_layout Part
Quantum Engineering Design
\end_layout
-\begin_layout Subsection
+\begin_layout Section
Structure Design
\end_layout
@@ -178,9 +178,9 @@ This energy value will be the same as the total band gap for the well from
\begin_layout Standard
\begin_inset Formula
-\[
-\varSigma E_{g}=E_{1h}+E_{g}+E_{1e}\thickapprox0.8eV
-\]
+\begin{equation}
+\varSigma E_{g}=E_{1h}+E_{g}+E_{1e}\thickapprox0.8eV\label{eq:Energy-Gap-Sum}
+\end{equation}
\end_inset
@@ -317,7 +317,7 @@ Ga
As and as such this was tested first.
\end_layout
-\begin_layout Subsubsection
+\begin_layout Subsection
Lattice Match
\end_layout
@@ -494,7 +494,7 @@ In order to compute a compound lattice constant for InGaAs, Vegard's law
\begin_layout Standard
\begin_inset Formula
\[
-\alpha_{A_{(1-x)}B_{x}}=(1-x)\alpha_{A}+x\alpha_{B}
+\alpha_{A_{(1-x)}B_{x}}=\left(1-x\right)\alpha_{A}+x\alpha_{B}
\]
\end_inset
@@ -522,18 +522,916 @@ This shows that to 4 significant figures the composition of InGaAs is lattice
matched to InP to within 0.001Å which is sufficient for this application.
\end_layout
-\begin_layout Subsubsection
+\begin_layout Subsection
Band Gap
\end_layout
-\begin_layout Subsection
-Probability Plot
+\begin_layout Standard
+Vegard's law can also be used to approximate the band gap of a ternary alloy,
+ such as InGaAs.
+ The band gaps at 300K for each alloy can be seen in table
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "tab:Band-gaps"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+.
+\end_layout
+
+\begin_layout Standard
+\begin_inset Float table
+wide false
+sideways false
+status open
+
+\begin_layout Plain Layout
+\align center
+\begin_inset Tabular
+
+
+
+
+
+|
+\begin_inset Text
+
+\begin_layout Plain Layout
+Material
+\end_layout
+
+\end_inset
+ |
+
+\begin_inset Text
+
+\begin_layout Plain Layout
+Band Gap at 300K, E
+\begin_inset script subscript
+
+\begin_layout Plain Layout
+g
+\end_layout
+
+\end_inset
+
+ (eV)
+\end_layout
+
+\end_inset
+ |
+
+
+|
+\begin_inset Text
+
+\begin_layout Plain Layout
+InAs
+\end_layout
+
+\end_inset
+ |
+
+\begin_inset Text
+
+\begin_layout Plain Layout
+0.35
+\end_layout
+
+\end_inset
+ |
+
+
+|
+\begin_inset Text
+
+\begin_layout Plain Layout
+GaAs
+\end_layout
+
+\end_inset
+ |
+
+\begin_inset Text
+
+\begin_layout Plain Layout
+1.42
+\end_layout
+
+\end_inset
+ |
+
+
+|
+\begin_inset Text
+
+\begin_layout Plain Layout
+InP
+\end_layout
+
+\end_inset
+ |
+
+\begin_inset Text
+
+\begin_layout Plain Layout
+1.34
+\end_layout
+
+\end_inset
+ |
+
+
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+Band gaps for prospective well and barrier materials
+\begin_inset CommandInset citation
+LatexCommand cite
+key "new_semiconductor_materials_archive"
+literal "false"
+
+\end_inset
+
+
+\begin_inset CommandInset label
+LatexCommand label
+name "tab:Band-gaps"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+In this case the band gap approximates to,
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+E_{g,In_{0.53}Ga_{0.47}As}\thickapprox0.53\cdotp0.35+0.47\cdotp1.42\thickapprox0.85\unit{eV}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+However the band gap has been experimentally found to be 0.75eV
+\begin_inset CommandInset citation
+LatexCommand cite
+key "aip_complete10.1063/1.322570"
+literal "false"
+
+\end_inset
+
+.
+ This implies that the linear relationship provided by Vegard's law is not
+ accurate enough and in this case a modified version including a bowing
+ parameter
+\begin_inset Formula $b$
+\end_inset
+
+ should be used,
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+E_{g,total}=xE_{g,a}+\left(1-x\right)E_{g,b}-bx\left(1-x\right)
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+For this application, however, the experimentally determined value will
+ be used.
+ This value is ideal for this application as it is comparable to and slightly
+ lower than the required 0.8eV energy value.
\end_layout
\begin_layout Subsection
+Width Calculation
+\end_layout
+
+\begin_layout Standard
+Having found two materials that are lattice matched with a suitable band
+ gap value, the final calculation is that of the quantum well width.
+ In order to calculate this value, the equation for energy levels within
+ an infinite quantum well will be used,
+\end_layout
+
+\begin_layout Standard
+
+\emph on
+\begin_inset Formula
+\begin{equation}
+E_{n}=\frac{n^{2}\pi^{2}\text{ħ}^{2}}{2mL^{2}}\label{eq:Energy-levels}
+\end{equation}
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+Referring back to equation
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "eq:Energy-Gap-Sum"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+, the terms for the first electron and hole energy levels can each be replaced
+ with equation
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "eq:Energy-levels"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+ as seen below,
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+\varSigma E_{g}=0.8\unit{eV}=E_{1h}+E_{g}+E_{1e}=\frac{1^{2}\pi^{2}\text{\emph{ħ}}^{2}}{2m_{h}^{*}L^{2}}+E_{g}+\frac{1^{2}\pi^{2}\text{\emph{ħ}}^{2}}{2m_{e}^{*}L^{2}}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+With the experimentally determined value for
+\begin_inset Formula $E_{g}$
+\end_inset
+
+ this equation can be condensed to,
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+0.8\unit{eV}=\frac{\pi^{2}\text{\emph{ħ}}^{2}}{2m_{h}^{*}L^{2}}+0.75+\frac{\pi^{2}\text{\emph{ħ}}^{2}}{2m_{e}^{*}L^{2}}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+0.05\unit{eV}=\frac{\pi^{2}\text{\emph{ħ}}^{2}}{2L^{2}}\left(\frac{1}{m_{h}^{*}}+\frac{1}{m_{e}^{*}}\right)
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+L=\sqrt{\frac{\pi^{2}\text{\emph{ħ}}^{2}}{2\cdotp(0.05\unit{eV})}\cdotp\left(\frac{1}{m_{h}^{*}}+\frac{1}{m_{e}^{*}}\right)}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+As a frequently studied composition due to it's favourable structural parameters
+ with InP, The charge carrier effective masses of In
+\begin_inset script subscript
+
+\begin_layout Plain Layout
+0.53
+\end_layout
+
+\end_inset
+
+Ga
+\begin_inset script subscript
+
+\begin_layout Plain Layout
+0.47
+\end_layout
+
+\end_inset
+
+As have been found experimentally to be as shown in table
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "tab:Effective-masses"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+.
+\end_layout
+
+\begin_layout Standard
+\begin_inset Float table
+wide false
+sideways false
+status open
+
+\begin_layout Plain Layout
+\align center
+\begin_inset Tabular
+
+
+
+
+
+|
+\begin_inset Text
+
+\begin_layout Plain Layout
+Charge Carrier
+\end_layout
+
+\end_inset
+ |
+
+\begin_inset Text
+
+\begin_layout Plain Layout
+Effective mass ratio in In
+\begin_inset script subscript
+
+\begin_layout Plain Layout
+0.53
+\end_layout
+
+\end_inset
+
+Ga
+\begin_inset script subscript
+
+\begin_layout Plain Layout
+0.47
+\end_layout
+
+\end_inset
+
+As (
+\begin_inset Formula $\frac{m^{*}}{m^{0}}$
+\end_inset
+
+)
+\end_layout
+
+\end_inset
+ |
+
+
+|
+\begin_inset Text
+
+\begin_layout Plain Layout
+Electron
+\end_layout
+
+\end_inset
+ |
+
+\begin_inset Text
+
+\begin_layout Plain Layout
+0.041
+\begin_inset CommandInset citation
+LatexCommand cite
+key "aip_complete10.1063/1.90860"
+literal "false"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+ |
+
+
+|
+\begin_inset Text
+
+\begin_layout Plain Layout
+Light Hole
+\end_layout
+
+\end_inset
+ |
+
+\begin_inset Text
+
+\begin_layout Plain Layout
+0.051
+\begin_inset CommandInset citation
+LatexCommand cite
+key "aip_complete10.1063/1.92393"
+literal "false"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+ |
+
+
+|
+\begin_inset Text
+
+\begin_layout Plain Layout
+Heavy Hole
+\end_layout
+
+\end_inset
+ |
+
+\begin_inset Text
+
+\begin_layout Plain Layout
+0.2
+\begin_inset CommandInset citation
+LatexCommand cite
+key "aip_complete10.1063/1.101816"
+literal "false"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+ |
+
+
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+Effective masses of charge carriers in
+\begin_inset CommandInset label
+LatexCommand label
+name "tab:Effective-masses"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+As the electrical and optical properties of the valence band are governed
+ by the heavy hole interactions, this effective mass ration will be used.
+\end_layout
+
+\begin_layout Standard
+Substituting these ratios into the above provides,
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+L=\sqrt{\frac{\pi^{2}\text{\emph{ħ}}^{2}}{2\cdotp(0.05\unit{eV})\cdotp m_{e}}\cdotp\left(\frac{1}{0.2}+\frac{1}{0.041}\right)}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+which reduces to a well length of 14.87nm.
+\end_layout
+
+\begin_layout Subsection
+Energy Level Calculations
+\end_layout
+
+\begin_layout Standard
+With all the parameters of the well ascertained the first and second confined
+ electron and hole energy levels can be found by utilising equation
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "eq:Energy-levels"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+.
+\end_layout
+
+\begin_layout Standard
+For confined electron states:
+\end_layout
+
+\begin_layout Standard
+
+\emph on
+\begin_inset Formula
+\[
+E_{1e}=\frac{1^{2}\pi^{2}\text{\emph{ħ}}^{2}}{2\cdotp m_{e}^{*}\cdotp\left(14.87\unit{nm}\right)^{2}}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+
+\emph on
+\begin_inset Formula
+\[
+E_{1e}=6.65\times10^{-21}\unit{J}=0.041\unit{eV}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+This equation shows that energy values are proportional to the square of
+
+\begin_inset Formula $n$
+\end_inset
+
+, the principal quantum number or energy level.
+ As such:
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+E_{2e}=2^{2}\cdotp E_{1e}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+
+\emph on
+\begin_inset Formula
+\[
+E_{2e}=2.66\times10^{-20}\unit{J}=0.17\unit{eV}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+For confined hole states:
+\end_layout
+
+\begin_layout Standard
+
+\emph on
+\begin_inset Formula
+\[
+E_{1h}=\frac{1^{2}\pi^{2}\text{\emph{ħ}}^{2}}{2\cdotp m_{h}^{*}\cdotp\left(14.87\unit{nm}\right)^{2}}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+
+\emph on
+\begin_inset Formula
+\[
+E_{1h}=1.36\times10^{-21}\unit{J}=0.0085\unit{eV}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+E_{2h}=2^{2}\cdotp E_{1h}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+
+\emph on
+\begin_inset Formula
+\[
+E_{2h}=5.45\times10^{-21}\unit{J}=0.034\unit{eV}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Section
+Probability Plot
+\end_layout
+
+\begin_layout Standard
+The probability of finding an electron in a quantum well is given by
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\begin{equation}
+P=\int_{0}^{L}\psi^{*}\psi dx\label{eq:wave-function-probability}
+\end{equation}
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+with
+\begin_inset Formula $\psi$
+\end_inset
+
+ in the case of an infinite quantum well being given by,
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+\psi\left(x\right)=A\sin\left(kx\right)=A\sin\left(\frac{n\pi}{L}x\right)
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+Where
+\begin_inset Formula $A$
+\end_inset
+
+ acts as a normalisation constant to satisfy the conditions
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+\int_{{\textstyle all\:space}}\psi^{*}\psi dV=1
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+in this case providing the wave function
+\begin_inset Formula $\psi$
+\end_inset
+
+ as
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\begin{equation}
+\psi\left(x\right)=\sqrt{\frac{2}{L}}\sin\left(\frac{n\pi}{L}x\right)\label{eq:wave-function}
+\end{equation}
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+Importantly, the above conditions are for an infinite quantum well where
+ an assumption is made that the well has a barrier region of infinite potential
+ such that the wavefunction is confined to the well.
+ A real quantum well is unable to satisfy this leading to the wavefunction
+
+\begin_inset Quotes eld
+\end_inset
+
+spilling
+\begin_inset Quotes erd
+\end_inset
+
+ into the barrier region.
+ For the purposes of plotting the probability density, however, it is a
+ reasonable assumption to make.
+\end_layout
+
+\begin_layout Standard
+Considering equation
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "eq:wave-function-probability"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+, if the probability can be found by integrating
+\begin_inset Formula $\psi^{*}\psi$
+\end_inset
+
+, or in this situation
+\begin_inset Formula $\psi^{2}$
+\end_inset
+
+ then the probability can be shown by plotting
+\begin_inset Formula $\psi^{2}$
+\end_inset
+
+, see figure
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "fig:Probability-plot"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+.
+ Here the well stretches from 0 to the blue line along the
+\begin_inset Formula $x$
+\end_inset
+
+ axis and
+\begin_inset Formula $n$
+\end_inset
+
+ has been set to 1 for the ground state.
+\end_layout
+
+\begin_layout Standard
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
+\begin_layout Plain Layout
+\align center
+\begin_inset Graphics
+ filename probability-plot.png
+ lyxscale 30
+ width 100col%
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+Probability plot for electron in ground state
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:Probability-plot"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Section
Probability Intervals
\end_layout
+\begin_layout Standard
+Combining equations
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "eq:wave-function-probability"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+ and
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "eq:wave-function"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+ gives the final probability function for the entire well:
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula
+\[
+P\left(0\leq x\leq x_{0}\right)=\frac{1}{L}\left(x_{0}-\frac{L}{2n\pi}\sin\left(\frac{2n\pi x_{0}}{L}\right)\right)
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+Where
+\begin_inset Formula $x_{0}$
+\end_inset
+
+ is an arbitrary distance across the well.
+\end_layout
+
\begin_layout Standard
\begin_inset Newpage pagebreak
\end_inset
@@ -541,7 +1439,7 @@ Probability Intervals
\end_layout
-\begin_layout Section
+\begin_layout Part
Application of Nanomaterials
\end_layout
diff --git a/coursework.pdf b/coursework.pdf
index 7f54d04..56ded81 100644
Binary files a/coursework.pdf and b/coursework.pdf differ
diff --git a/probability-plot.png b/probability-plot.png
new file mode 100644
index 0000000..6e4c612
Binary files /dev/null and b/probability-plot.png differ
diff --git a/references.bib b/references.bib
index a2acea0..c0b7de0 100644
--- a/references.bib
+++ b/references.bib
@@ -16,5 +16,67 @@ year = "2014-11"
@misc{new_semiconductor_materials_archive,
title={NSM Archive - Physical Properties of Semiconductors},
url={http://matprop.ru/},
-journal={New Semiconductor Materials Archive}, publisher={Ioffe Institute}
+journal={New Semiconductor Materials Archive},
+publisher={Ioffe Institute}
}
+
+@article{aip_complete10.1063/1.322570,
+abstract = "Very uniform In 0.53 Ga 0.47 As was grown on InP by liquid phase epitaxy. The electron mobility is 8450 cm 2 /V sec at 300 K and 27700 cm 2 /V sec at 77 K. The mobility increases with decreasing temperature from 300 to 77 K in contrast to the results of In 1− x Ga x As grown directly on GaAs by vapor phase epitaxy. The energy gap of this high‐mobility material is 0.750 eV at room temperature.",
+author = "Takeda, Yoshikazu and Sasaki, Akio and Imamura, Yujiro and Takagi, Toshinori",
+issn = "0021-8979",
+journal = "Journal of Applied Physics",
+language = "eng",
+number = "12",
+pages = "5405,5408",
+publisher = "American Institute of Physics",
+title = "Electron mobility and energy gap of In 0.53 Ga 0.47 As on InP substrate",
+volume = "47",
+year = "1976-12",
+}
+
+@article{aip_complete10.1063/1.90860,
+abstract = "The band-edge effective mass for conduction electrons in Ga x In 1-x As y P 1-y has been determined for several different alloy compositions covering the complete range of alloys grown lattice-matched on InP. Measurements show that the effective mass varies nearly linearly with alloy composition.",
+author = "Nicholas, R. J. and Portal, J. C. and Houlbert, C. and Perrier, P. and Pearsall, T. P.",
+issn = "0003-6951",
+journal = "Applied Physics Letters",
+keywords = "Galliumarsenid ; Drei-Fuenf-Verbindung ; Indiumphosphid ; Effektive Masse;",
+language = "eng",
+number = "8",
+pages = "492,494",
+publisher = "American Institute of Physics",
+title = "An experimental determination of the effective masses for Ga x In 1-x As y P 1-y alloys grown on InP",
+volume = "34",
+year = "1979",
+}
+
+@article{aip_complete10.1063/1.92393,
+abstract = "We report the use of optical pumping in p -type Ga x In 1-x As y P 1-y nearly lattice-matched to InP. Analysis of the conduction‐electron spin‐polarized photoluminescence has been used to deduce the valence‐band light‐hole effective mass as a function of alloy composition. Our results are in good agreement with masses calculated using the k·p approximation.",
+author = "Hermann, Claudine and Pearsall, Thomas P.",
+issn = "0003-6951",
+journal = "Applied Physics Letters",
+keywords = "Halbleiterverbindung ; Galliumarsenid ; Indiumphosphid ; A3-B5-Verbindung ; Optisches Pumpen ; Effektive Masse ; Defektelektron ; Valenzband ; Halbleitersubstrat ; P-Halbleiter ; Leitungselektron ; Photolumineszenz ; Spinorientierung;",
+language = "eng",
+number = "6",
+pages = "450,452",
+publisher = "American Institute of Physics",
+title = "Optical pumping and the valence-band light-hole effective mass in Ga x In 1-x As y P 1-y (y approx. 2.2x)",
+volume = "38",
+year = "1981",
+}
+
+@article{aip_complete10.1063/1.101816,
+author = "Lin, S. Y. and Liu, C. T. and Tsui, D. C. and Jones, E. D. and Dawson, L. R.",
+issn = "0003-6951",
+journal = "Applied Physics Letters",
+keywords = "Materials Sciencegallium Arsenides ; Holes ; Indium Arsenides ; Cyclotron Resonance ; Effective Mass ; Electronic Structure ; Light Transmission ; Superlattices ; Arsenic Compounds ; Arsenides ; Gallium Compounds ; Indium Compounds ; Mass ; Pnictides ; Resonance;",
+language = "eng",
+number = "7",
+pages = "666,668",
+publisher = "American Institute of Physics",
+title = "Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In 0.20 Ga 0.80 As/GaAs",
+volume = "55",
+year = "1989-08-14",
+}
+
+
+