started design

.gitignore

@@ -0,0 +1,2 @@
+*~
+*#

coursework.lyx

@@ -43,9 +43,11 @@
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@@ -97,6 +99,393 @@ Quantum Engineering Design
 Structure Design
 \end_layout
 
+\begin_layout Standard
+In order to design a quantum well which emits light of wavelength 1.55μm,
+ a well material must be chosen such that an interband electron transition
+ emits photons of this wavelength.
+\end_layout
+
+\begin_layout Standard
+This band gap energy can be found from the equation 
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula 
+\[
+E=hf
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+When considering photons, 
+\begin_inset Formula $f$
+\end_inset
+
+ can be substituted with
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula 
+\[
+f=\frac{c}{\lambda}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+In order to find the 
+\begin_inset Formula $E$
+\end_inset
+
+ in terms of wavelength
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula 
+\[
+E=\frac{hc}{\lambda}
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+Returning to the specifications, this allows 1.55μm to be expressed as 1.28x10
+\begin_inset script superscript
+
+\begin_layout Plain Layout
+-19
+\end_layout
+
+\end_inset
+
+ J or approximately 0.8 eV.
+\end_layout
+
+\begin_layout Standard
+This energy value will be the same as the total band gap for the well from
+ the first hole energy level to the first electron enery level, shown as
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula 
+\[
+\varSigma E_{g}=E_{1h}+E_{g}+E_{1e}\thickapprox0.8eV
+\]
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+see figure 
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "fig:Well-Band-structure"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+.
+\end_layout
+
+\begin_layout Standard
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
+\begin_layout Plain Layout
+\align center
+\begin_inset Graphics
+	filename WellBandStructure.png
+	lyxscale 40
+	width 60col%
+
+\end_inset
+
+
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+Band structure of an AlGaAs/GaAs/AlGaAs quantum well including discrete
+ energy levels 
+\begin_inset CommandInset citation
+LatexCommand cite
+key "ieee_s6824198"
+literal "false"
+
+\end_inset
+
+ 
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:Well-Band-structure"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Formula $E_{g}$
+\end_inset
+
+ should be the dominant term in this equation and as such in investigating
+ suitable materials, the bulk band gap should be close to but lower than
+ 0.8eV.
+\end_layout
+
+\begin_layout Standard
+None of the binary III-V Indium based alloys have bulk band gaps in a suitable
+ range, as such ternary alloys were investigated.
+\end_layout
+
+\begin_layout Standard
+Indium Gallium Arsenide (In
+\begin_inset script subscript
+
+\begin_layout Plain Layout
+\begin_inset Formula $x$
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+Ga
+\begin_inset script subscript
+
+\begin_layout Plain Layout
+\begin_inset Formula $(1-x)$
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+As) as a well material with Indium Phosphide (InP) as a barrier material
+ would provide a suitable combination assuming that a composition ratio
+ 
+\begin_inset Formula $x$
+\end_inset
+
+ could be found that satisfied the two conditions of having the required
+ bulk band gap and being lattice matched.
+ A common ratio in industry is In
+\begin_inset script subscript
+
+\begin_layout Plain Layout
+0.53
+\end_layout
+
+\end_inset
+
+Ga
+\begin_inset script subscript
+
+\begin_layout Plain Layout
+0.47
+\end_layout
+
+\end_inset
+
+As and as such this was tested first.
+\end_layout
+
+\begin_layout Subsubsection
+Lattice Match
+\end_layout
+
+\begin_layout Standard
+Lattice matching is the process of ensuring that two crystalline structures
+ are of similar dimensions in order to decrease strain at the interface
+ between the two materials.
+ This is particularly important for quantum wells formed through epitaxial
+ growth as strain introduced between such thin layers can cause defects
+ ultimately negatively affecting it's electronic properties.
+\end_layout
+
+\begin_layout Standard
+The lattice constants between the barrier and well materials should be as
+ close as is deemed acceptable for the application.
+ The lattice constants for the prospective materials are shown in table
+ 
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "tab:Lattice-constants"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+.
+\end_layout
+
+\begin_layout Standard
+\begin_inset Float table
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+status open
+
+\begin_layout Plain Layout
+\align center
+\begin_inset Tabular
+<lyxtabular version="3" rows="4" columns="2">
+<features tabularvalignment="middle">
+<column alignment="center" valignment="top">
+<column alignment="center" valignment="top">
+<row>
+<cell alignment="center" valignment="top" topline="true" bottomline="true" leftline="true" usebox="none">
+\begin_inset Text
+
+\begin_layout Plain Layout
+Material
+\end_layout
+
+\end_inset
+</cell>
+<cell alignment="center" valignment="top" topline="true" bottomline="true" leftline="true" rightline="true" usebox="none">
+\begin_inset Text
+
+\begin_layout Plain Layout
+Lattice Constant (Å)
+\end_layout
+
+\end_inset
+</cell>
+</row>
+<row>
+<cell alignment="center" valignment="top" topline="true" leftline="true" usebox="none">
+\begin_inset Text
+
+\begin_layout Plain Layout
+InAs
+\end_layout
+
+\end_inset
+</cell>
+<cell alignment="center" valignment="top" topline="true" leftline="true" rightline="true" usebox="none">
+\begin_inset Text
+
+\begin_layout Plain Layout
+6.0583
+\end_layout
+
+\end_inset
+</cell>
+</row>
+<row>
+<cell alignment="center" valignment="top" topline="true" leftline="true" usebox="none">
+\begin_inset Text
+
+\begin_layout Plain Layout
+GaAs
+\end_layout
+
+\end_inset
+</cell>
+<cell alignment="center" valignment="top" topline="true" leftline="true" rightline="true" usebox="none">
+\begin_inset Text
+
+\begin_layout Plain Layout
+5.653
+\end_layout
+
+\end_inset
+</cell>
+</row>
+<row>
+<cell alignment="center" valignment="top" topline="true" bottomline="true" leftline="true" usebox="none">
+\begin_inset Text
+
+\begin_layout Plain Layout
+InP
+\end_layout
+
+\end_inset
+</cell>
+<cell alignment="center" valignment="top" topline="true" bottomline="true" leftline="true" rightline="true" usebox="none">
+\begin_inset Text
+
+\begin_layout Plain Layout
+5.869
+\end_layout
+
+\end_inset
+</cell>
+</row>
+</lyxtabular>
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+Lattice constants for prospective well and barrier materials 
+\begin_inset CommandInset label
+LatexCommand label
+name "tab:Lattice-constants"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+In order to compute a compound lattice constant for InGaAs, Vegard's law
+ can be applied.
+ Vegard's law provides an approximation for the lattice constant of a solid
+ solution by 
+\end_layout
+
+\begin_layout Subsubsection
+Band Gap
+\end_layout
+
 \begin_layout Subsection
 Probability Plot
 \end_layout
@@ -121,6 +510,18 @@ Application of Nanomaterials
 \end_inset
 
 
+\end_layout
+
+\begin_layout Standard
+\begin_inset CommandInset bibtex
+LatexCommand bibtex
+btprint "btPrintCited"
+bibfiles "references"
+options "bibtotoc"
+
+\end_inset
+
+
 \end_layout
 
 \end_body

coursework.lyx~

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-\begin_layout Title
-EEE3037 Nanotechnology Coursework
-\end_layout
-
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-\align center
-6420013
-\end_layout
-
-\begin_layout Section
-Quantum Engineering Design
-\end_layout
-
-\begin_layout Subsection
-Structure Design
-\end_layout
-
-\begin_layout Subsection
-Probability Plot
-\end_layout
-
-\begin_layout Subsection
-Probability Intervals
-\end_layout
-
-\begin_layout Standard
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-
-
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-
-\begin_layout Section
-Application of Nanomaterials
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-
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references.bib

@@ -0,0 +1,15 @@
+@article{ieee_s6824198,
+abstract = "<p>Quantum well infrared photodetectors (QWIPs) are known for their stability, high pixel-to-pixel uniformity, and high-pixel operability, which are essential for large area imaging arrays. In this paper, we discuss the initial demonstration of QWIP devices, and the many years of progress that propelled this technology toward the demonstration of large format focal plane arrays. In addition, we present some potential applications of this technology in science and medicine.</p>",
+author = "Gunapala, Sarath D and Bandara, Sumith V and Liu, John K and Mumolo, Jason M and Rafol, Sir B and Ting, David Z and Soibel, Alexander and Hill, Cory",
+issn = "1077-260X",
+journal = "IEEE Journal of Selected Topics in Quantum Electronics",
+keywords = "Detectors ; Noise ; Gallium Arsenide ; Absorption ; Cameras ; Dark Current ; Engineering ; Physics",
+language = "eng",
+number = "6",
+pages = "154,165",
+publisher = "IEEE",
+title = "Quantum Well Infrared Photodetector Technology and Applications",
+volume = "20",
+year = "2014-11",
+}
+