started design
This commit is contained in:
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parent
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2
.gitignore
vendored
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vendored
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*~
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*#
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BIN
WellBandStructure.png
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WellBandStructure.png
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405
coursework.lyx
405
coursework.lyx
@ -43,9 +43,11 @@
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@ -97,6 +99,393 @@ Quantum Engineering Design
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Structure Design
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\end_layout
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\begin_layout Standard
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In order to design a quantum well which emits light of wavelength 1.55μm,
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a well material must be chosen such that an interband electron transition
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emits photons of this wavelength.
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\end_layout
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\begin_layout Standard
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This band gap energy can be found from the equation
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\end_layout
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\[
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E=hf
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\]
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When considering photons,
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can be substituted with
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\begin_inset Formula
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\[
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f=\frac{c}{\lambda}
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In order to find the
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\end_inset
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in terms of wavelength
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\[
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E=\frac{hc}{\lambda}
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\]
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Returning to the specifications, this allows 1.55μm to be expressed as 1.28x10
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-19
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J or approximately 0.8 eV.
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\end_layout
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\begin_layout Standard
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This energy value will be the same as the total band gap for the well from
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the first hole energy level to the first electron enery level, shown as
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\end_layout
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\begin_inset Formula
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\[
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\varSigma E_{g}=E_{1h}+E_{g}+E_{1e}\thickapprox0.8eV
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\]
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see figure
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filename WellBandStructure.png
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lyxscale 40
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width 60col%
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Band structure of an AlGaAs/GaAs/AlGaAs quantum well including discrete
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energy levels
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\begin_inset Formula $E_{g}$
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\end_inset
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should be the dominant term in this equation and as such in investigating
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suitable materials, the bulk band gap should be close to but lower than
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0.8eV.
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\end_layout
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\begin_layout Standard
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None of the binary III-V Indium based alloys have bulk band gaps in a suitable
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range, as such ternary alloys were investigated.
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\end_layout
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\begin_layout Standard
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Indium Gallium Arsenide (In
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\begin_inset script subscript
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\begin_inset Formula $x$
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\end_layout
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\end_inset
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Ga
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\end_inset
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As) as a well material with Indium Phosphide (InP) as a barrier material
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would provide a suitable combination assuming that a composition ratio
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\begin_inset Formula $x$
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\end_inset
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could be found that satisfied the two conditions of having the required
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bulk band gap and being lattice matched.
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A common ratio in industry is In
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\begin_inset script subscript
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0.53
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\end_layout
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\end_inset
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Ga
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\begin_inset script subscript
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0.47
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\end_layout
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\end_inset
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As and as such this was tested first.
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\end_layout
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\begin_layout Subsubsection
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Lattice Match
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\end_layout
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\begin_layout Standard
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Lattice matching is the process of ensuring that two crystalline structures
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are of similar dimensions in order to decrease strain at the interface
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between the two materials.
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This is particularly important for quantum wells formed through epitaxial
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growth as strain introduced between such thin layers can cause defects
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ultimately negatively affecting it's electronic properties.
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\end_layout
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\begin_layout Standard
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The lattice constants between the barrier and well materials should be as
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close as is deemed acceptable for the application.
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The lattice constants for the prospective materials are shown in table
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\begin_inset CommandInset ref
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LatexCommand ref
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reference "tab:Lattice-constants"
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plural "false"
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caps "false"
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noprefix "false"
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\end_inset
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.
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\end_layout
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\begin_layout Standard
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<lyxtabular version="3" rows="4" columns="2">
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<features tabularvalignment="middle">
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Material
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Lattice Constant (Å)
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</row>
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<row>
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InAs
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\end_layout
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\end_inset
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</cell>
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<cell alignment="center" valignment="top" topline="true" leftline="true" rightline="true" usebox="none">
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6.0583
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\end_layout
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</cell>
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<row>
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GaAs
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\end_layout
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\end_inset
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</cell>
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<cell alignment="center" valignment="top" topline="true" leftline="true" rightline="true" usebox="none">
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5.653
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\end_layout
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InP
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\end_layout
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<cell alignment="center" valignment="top" topline="true" bottomline="true" leftline="true" rightline="true" usebox="none">
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5.869
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\begin_layout Plain Layout
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\begin_inset Caption Standard
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\begin_layout Plain Layout
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Lattice constants for prospective well and barrier materials
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\begin_inset CommandInset label
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LatexCommand label
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name "tab:Lattice-constants"
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\end_layout
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\begin_layout Standard
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In order to compute a compound lattice constant for InGaAs, Vegard's law
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can be applied.
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Vegard's law provides an approximation for the lattice constant of a solid
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solution by
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\end_layout
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\begin_layout Subsubsection
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Band Gap
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\end_layout
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\begin_layout Subsection
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Probability Plot
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\end_layout
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@ -121,6 +510,18 @@ Application of Nanomaterials
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\end_inset
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128
coursework.lyx~
128
coursework.lyx~
@ -1,128 +0,0 @@
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EEE3037 Nanotechnology Coursework
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\begin_layout Standard
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\align center
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6420013
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\end_layout
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\begin_layout Section
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Quantum Engineering Design
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\end_layout
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\begin_layout Subsection
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Structure Design
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\end_layout
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\begin_layout Subsection
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Probability Plot
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Probability Intervals
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Application of Nanomaterials
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BIN
coursework.pdf
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15
references.bib
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references.bib
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@article{ieee_s6824198,
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abstract = "<p>Quantum well infrared photodetectors (QWIPs) are known for their stability, high pixel-to-pixel uniformity, and high-pixel operability, which are essential for large area imaging arrays. In this paper, we discuss the initial demonstration of QWIP devices, and the many years of progress that propelled this technology toward the demonstration of large format focal plane arrays. In addition, we present some potential applications of this technology in science and medicine.</p>",
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author = "Gunapala, Sarath D and Bandara, Sumith V and Liu, John K and Mumolo, Jason M and Rafol, Sir B and Ting, David Z and Soibel, Alexander and Hill, Cory",
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issn = "1077-260X",
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journal = "IEEE Journal of Selected Topics in Quantum Electronics",
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keywords = "Detectors ; Noise ; Gallium Arsenide ; Absorption ; Cameras ; Dark Current ; Engineering ; Physics",
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language = "eng",
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number = "6",
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pages = "154,165",
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publisher = "IEEE",
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title = "Quantum Well Infrared Photodetector Technology and Applications",
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volume = "20",
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year = "2014-11",
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}
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