238 lines
14 KiB
BibTeX
238 lines
14 KiB
BibTeX
@article{yao,
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author = {Yao, Yu and Kats, Mikhail A. and Genevet, Patrice and Yu, Nanfang and Song, Yi and Kong, Jing and Capasso, Federico},
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doi = {10.1021/nl3047943},
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issn = {1530-6984},
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journal = {Nano Letters},
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note = {doi: 10.1021/nl3047943},
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number = {3},
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pages = {1257--1264},
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publisher = {American Chemical Society},
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risfield_0_da = {2013/03/13},
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risfield_1_t2 = {Nano Letters},
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title = {Broad Electrical Tuning of Graphene-Loaded Plasmonic Antennas},
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url = {https://pubs.acs.org/doi/10.1021/nl3047943},
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urldate = {2021-04-19},
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volume = {13},
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year = {2013}
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}
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@article{david-paper,
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author = {Samuels, Alexander J. and Carey, J. David},
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doi = {10.1021/acsami.5b05140},
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issn = {1944-8244},
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journal = {ACS Applied Materials \& Interfaces},
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note = {doi: 10.1021/acsami.5b05140},
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number = {40},
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pages = {22246--22255},
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publisher = {American Chemical Society},
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risfield_0_da = {2015/10/14},
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risfield_1_t2 = {ACS Applied Materials \& Interfaces},
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title = {Engineering Graphene Conductivity for Flexible and High-Frequency Applications},
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url = {https://pubs.acs.org/doi/pdf/10.1021/acsami.5b05140},
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urldate = {2021-04-20},
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volume = {7},
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year = {2015}
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}
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@article{graphene-high-temp,
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abstract = {Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. Here, we measure the intrinsic Fermi level (|EF| = 2.93 kBT) or intrinsic carrier density (nin = 3.87 {\texttimes} 10(6) cm(-2)K(-2){\textcdot} T(2)), carrier drift velocity, and G mode phonon energy of graphene devices and their temperature dependencies up to 2400 K. Our results show intrinsic carrier density of graphene is an order of magnitude less sensitive to temperature than those of Si or Ge, and reveal the great potentials of graphene as a material for high temperature devices. We also observe a linear decline of saturation drift velocity with increasing temperature, and identify the temperature coefficients of the intrinsic G mode phonon energy. Above knowledge is vital in understanding the physical phenomena of graphene under high power or high temperature.},
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author = {Yin, Yan and Cheng, Zengguang and Wang, Li and Jin, Kuijuan and Wang, Wenzhong},
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doi = {10.1038/srep05758},
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issn = {2045-2322},
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journal = {Scientific reports},
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month = jul,
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pages = {5758--5758},
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publisher = {Nature Publishing Group},
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risfield_0_db = {PubMed},
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risfield_1_la = {eng},
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risfield_2_an = {25044003},
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risfield_3_u1 = {25044003[pmid]},
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risfield_4_u2 = {PMC4104577[pmcid]},
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risfield_5_u4 = {srep05758[PII]},
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title = {Graphene, a material for high temperature devices--intrinsic carrier density, carrier drift velocity, and lattice energy},
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url = {https://www.ncbi.nlm.nih.gov/pmc/articles/PMC4104577},
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urldate = {2021-04-20},
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volume = {4},
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year = {2014}
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}
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@misc{fermi-dirac-dist,
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author = {Zeghbroeck, Bart Van},
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organization = {University of Colorado, Boulder},
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title = {Carrier distribution functions},
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url = {https://ecee.colorado.edu/~bart/book/book/chapter2/ch2_5.htm#fig2_5_2},
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urldate = {2021-04-24},
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year = {2011}
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}
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@article{graphene-review-2010,
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abstract = {Graphene has changed from being the exclusive domain of condensed-matter physicists to being explored by those in the electron-device community. In particular, graphene-based transistors have developed rapidly and are now considered an option for post-silicon electronics. However, many details about the potential performance of graphene transistors in real applications remain unclear. Here I review the properties of graphene that are relevant to electron devices, discuss the trade-offs among these properties and examine their effects on the performance of graphene transistors in both logic and radiofrequency applications. I conclude that the excellent mobility of graphene may not, as is often assumed, be its most compelling feature from a device perspective. Rather, it may be the possibility of making devices with channels that are extremely thin that will allow graphene field-effect transistors to be scaled to shorter channel lengths and higher speeds without encountering the adverse short-channel effects that restrict the performance of existing devices. Outstanding challenges for graphene transistors include opening a sizeable and well-defined bandgap in graphene, making large-area graphene transistors that operate in the current-saturation regime and fabricating graphene nanoribbons with well-defined widths and clean edges.},
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author = {Schwierz, Frank},
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doi = {10.1038/nnano.2010.89},
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issn = {1748-3395},
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journal = {Nature Nanotechnology},
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number = {7},
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pages = {487--496},
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risfield_0_da = {2010/07/01},
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title = {Graphene transistors},
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url = {https://www.nature.com/articles/nnano.2010.89},
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urldate = {2021-04-25},
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volume = {5},
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year = {2010}
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}
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@misc{warda-gfet-review,
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archiveprefix = {arXiv},
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author = {Warda, Mohamed},
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eprint = {2010.10382},
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primaryclass = {cond-mat.mes-hall},
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title = {Graphene Field Effect Transistors: A Review},
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url = {https://arxiv.org/abs/2010.10382},
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urldate = {2021-04-25},
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year = {2020}
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}
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@article{owidtechnologicalprogress,
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author = {Roser, Max and Ritchie, Hannah},
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journal = {Our World in Data},
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title = {Technological Progress},
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url = {https://ourworldindata.org/technological-progress},
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urldate = {2021-04-25},
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year = {2013}
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}
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@misc{transistors-21,
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author = {Courtland, Rachel},
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organization = {IEEE Spectrum},
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title = {Transistors Could Stop Shrinking in 2021},
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url = {https://spectrum.ieee.org/semiconductors/devices/transistors-could-stop-shrinking-in-2021},
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urldate = {2021-04-25},
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year = {2016}
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}
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@article{geim-04,
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abstract = {We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 1013 per square centimeter and with room-temperature mobilities of \~{}10,000 square centimeters per volt-second can be induced by applying gate voltage.},
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author = {Novoselov, K. S. and Geim, A. K. and Morozov, S. V. and Jiang, D. and Zhang, Y. and Dubonos, S. V. and Grigorieva, I. V. and Firsov, A. A.},
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doi = {10.1126/science.1102896},
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eprint = {https://science.sciencemag.org/content/306/5696/666.full.pdf},
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issn = {0036-8075},
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journal = {Science},
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number = {5696},
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pages = {666--669},
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publisher = {American Association for the Advancement of Science},
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title = {Electric Field Effect in Atomically Thin Carbon Films},
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url = {https://science.sciencemag.org/content/306/5696/666},
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urldate = {2021-04-26},
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volume = {306},
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year = {2004}
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}
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@article{gnrfet-structure-image,
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abstract = {In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude.},
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article-number = {11},
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author = {Banadaki, Yaser M. and Srivastava, Ashok},
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doi = {10.3390/electronics5010011},
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issn = {2079-9292},
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journal = {Electronics},
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number = {1},
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title = {Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor},
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url = {https://www.mdpi.com/2079-9292/5/1/11},
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urldate = {2021-04-26},
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volume = {5},
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year = {2016}
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}
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@article{gnrfet-applications,
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abstract = {The dimension down scaling capability of the silicon based transistors has produced significant developments in the electronic industry. The channel length reduction has been accompanied by many limitations and challenges in the performance of the transistor. According to the ITRS and Moore law silicon based technology is near to its end, consequently the novel material innovations are needed in the near future. The graphene based material is the promising candidate for silicon channel replacement in conventional transistor. In this paper, graphene, graphene nanoribbons and their fundamental properties such as mechanical, electrical and electronic specifications are introduced. Then, graphene nanoribbon field effect transistor and its modeling and simulation methods are investigated. The best method for device simulation is the self-consistent solving of Poisson and Schr{\"o}dinger equations under non-equilibrium green's function with the tight binding approximation. In order to investigate the effect of down scaling on the transistor performance, parameters such as drain induced barrier lowering, sub-threshold swing, ION/IOFFratio, and transconductance are studied. Moreover, utilizations of the graphene nanoribbon field effect transistor including circuit-based, high frequency, and biosensors applications are introduced. The results show that graphene based transistors are an excellent replacement to silicon based transistors.},
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author = {Radsar, Tahereh and Khalesi, Hassan and Ghods, Vahid},
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doi = {10.1016/j.spmi.2021.106869},
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issn = {0749-6036},
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journal = {Superlattices and Microstructures},
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keywords = {Graphene; Graphene nanoribbon field effect transistor; GNRFET; Graphene bio application},
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pages = {106869},
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title = {Graphene nanoribbon field effect transistors analysis and applications},
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url = {https://www.sciencedirect.com/science/article/pii/S0749603621000677},
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urldate = {2021-04-26},
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volume = {153},
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year = {2021}
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}
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@inproceedings{gnrfet-low-power,
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author = {Chen, Ying-Yu and Sangai, Amit and Gholipour, Morteza and Chen, Deming},
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booktitle = {International Symposium on Low Power Electronics and Design (ISLPED)},
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doi = {10.1109/ISLPED.2013.6629286},
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pages = {151--156},
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title = {Graphene nano-ribbon field-effect transistors as future low-power devices},
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url = {https://ieeexplore.ieee.org/document/6629286},
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urldate = {2021-04-26},
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year = {2013}
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}
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@article{flexible-antennae-review,
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abstract = {The field of flexible antennas is witnessing an exponential growth due to the demand for wearable devices, Internet of Things (IoT) framework, point of care devices, personalized medicine platform, 5G technology, wireless sensor networks, and communication devices with a smaller form factor to name a few. The choice of non-rigid antennas is application specific and depends on the type of substrate, materials used, processing techniques, antenna performance, and the surrounding environment. There are numerous design innovations, new materials and material properties, intriguing fabrication methods, and niche applications. This review article focuses on the need for flexible antennas, materials, and processes used for fabricating the antennas, various material properties influencing antenna performance, and specific biomedical applications accompanied by the design considerations. After a comprehensive treatment of the above-mentioned topics, the article will focus on inherent challenges and future prospects of flexible antennas. Finally, an insight into the application of flexible antenna on future wireless solutions is discussed.},
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article-number = {847},
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author = {Kirtania, Sharadindu Gopal and Elger, Alan Wesley and Hasan, Md. Rabiul and Wisniewska, Anna and Sekhar, Karthik and Karacolak, Tutku and Sekhar, Praveen Kumar},
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doi = {10.3390/mi11090847},
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issn = {2072-666X},
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journal = {Micromachines},
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number = {9},
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pubmedid = {32933077},
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title = {Flexible Antennas: A Review},
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url = {https://www.mdpi.com/2072-666X/11/9/847},
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urldate = {2021-04-26},
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volume = {11},
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year = {2020}
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}
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@article{water-transfer-graphene-antennae,
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author = {Wang, Weijia and Ma, Chao and Zhang, Xingtang and Shen, Jiajia and Hanagata, Nobutaka and Huangfu, Jiangtao and Xu, Mingsheng},
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doi = {10.1080/14686996.2019.1653741},
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eprint = { https://doi.org/10.1080/14686996.2019.1653741 },
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journal = {Science and Technology of Advanced Materials},
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note = {PMID: 31489056},
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number = {1},
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pages = {870--875},
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publisher = {Taylor \& Francis},
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title = {High-performance printable 2.4 GHz graphene-based antenna using water-transferring technology},
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url = {https://doi.org/10.1080/14686996.2019.1653741},
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urldate = {2021-04-26},
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volume = {20},
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year = {2019}
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}
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@article{graphene-microwave,
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author = {Bozzi, Maurizio and Pierantoni, Luca and Bellucci, Stefano},
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doi = {10.13164/re.2015.0661},
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journal = {Radioengineering},
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month = {09},
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pages = {661--669},
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title = {Applications of Graphene at Microwave Frequencies},
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url = {https://www.researchgate.net/publication/283181514_Applications_of_Graphene_at_Microwave_Frequencies},
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urldate = {2021-04-26},
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volume = {24},
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year = {2015}
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}
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@article{graphene-modal-prop-drude,
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author = {Araneo, R. and Burghignoli, Paolo and Lovat, Giampiero and Hanson, George},
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doi = {10.1109/TEMC.2015.2406072},
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journal = {IEEE Transactions on Electromagnetic Compatibility},
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month = {08},
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pages = {1--8},
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title = {Modal Propagation and Crosstalk Analysis in Coupled Graphene Nanoribbons},
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url = {https://www.researchgate.net/publication/276930151_Modal_Propagation_and_Crosstalk_Analysis_in_Coupled_Graphene_Nanoribbons},
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urldate = {2021-04-26},
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volume = {57},
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year = {2015}
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}
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@misc{short-channel,
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author = {{{Semiconductor Engineering}}},
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month = jul,
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title = {Knowledge Center Short Channel Effects},
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url = {https://semiengineering.com/knowledge_centers/manufacturing/process/issues/short-channel-effects/},
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urldate = {2021-04-26},
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year = {2018}
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}
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