adding part a

Report/references.bib

@@ -65,3 +65,48 @@
 	year = {2011}
 }
 
+@article{graphene-review-2010,
+	abstract = {Graphene has changed from being the exclusive domain of condensed-matter physicists to being explored by those in the electron-device community. In particular, graphene-based transistors have developed rapidly and are now considered an option for post-silicon electronics. However, many details about the potential performance of graphene transistors in real applications remain unclear. Here I review the properties of graphene that are relevant to electron devices, discuss the trade-offs among these properties and examine their effects on the performance of graphene transistors in both logic and radiofrequency applications. I conclude that the excellent mobility of graphene may not, as is often assumed, be its most compelling feature from a device perspective. Rather, it may be the possibility of making devices with channels that are extremely thin that will allow graphene field-effect transistors to be scaled to shorter channel lengths and higher speeds without encountering the adverse short-channel effects that restrict the performance of existing devices. Outstanding challenges for graphene transistors include opening a sizeable and well-defined bandgap in graphene, making large-area graphene transistors that operate in the current-saturation regime and fabricating graphene nanoribbons with well-defined widths and clean edges.},
+	author = {Schwierz, Frank},
+	doi = {10.1038/nnano.2010.89},
+	issn = {1748-3395},
+	journal = {Nature Nanotechnology},
+	number = {7},
+	pages = {487--496},
+	risfield_0_da = {2010/07/01},
+	title = {Graphene transistors},
+	url = {https://www.nature.com/articles/nnano.2010.89},
+	urldate = {2021-04-25},
+	volume = {5},
+	year = {2010}
+}
+
+@misc{warda-gfet-review,
+	archiveprefix = {arXiv},
+	author = {Warda, Mohamed},
+	eprint = {2010.10382},
+	primaryclass = {cond-mat.mes-hall},
+	title = {Graphene Field Effect Transistors: A Review},
+	url = {https://arxiv.org/abs/2010.10382},
+	urldate = {2021-04-25},
+	year = {2020}
+}
+
+@article{owidtechnologicalprogress,
+	author = {Roser, Max and Ritchie, Hannah},
+	journal = {Our World in Data},
+	title = {Technological Progress},
+	url = {https://ourworldindata.org/technological-progress},
+	urldate = {2021-04-25},
+	year = {2013}
+}
+
+@misc{transistors-21,
+	author = {Courtland, Rachel},
+	organization = {IEEE Spectrum},
+	title = {Transistors Could Stop Shrinking in 2021},
+	url = {https://spectrum.ieee.org/semiconductors/devices/transistors-could-stop-shrinking-in-2021},
+	urldate = {2021-04-25},
+	year = {2016}
+}
+

Report/report.lyx

@@ -273,7 +273,9 @@ Introduction
 \end_layout
 
 \begin_layout Standard
-Graphene is a 2D allotrope of carbon with 
+Graphene is a 2D allotrope of carbon with highly interesting mechanical
+ and electrical properties that have made it a target of significant research
+ in the last two decades since it's experimental discovery in 2004.
 \end_layout
 
 \begin_layout Standard
@@ -288,8 +290,8 @@ noprefix "false"
 
 \end_inset
 
- presents two applications of graphene that take advantage of it's behaviour
+ presents two applications of graphene that take advantage of it's electrical
- at high frequencies.
+ and mechanical behaviour at high frequencies.
  Section 
 \begin_inset CommandInset ref
 LatexCommand ref
@@ -312,10 +314,259 @@ name "sec:Applications"
 \end_inset
 
 
+\end_layout
+
+\begin_layout Standard
+This section explores two uses of graphene for high frequency applications.
+ First, the applicability of graphene for field effect transisitors will
+ be considered as a channel material.
+ Throughout, a particular focus will be paid to use in digital logic and
+ thus as a possible replacement for the current Silicon CMOS/MOSFET paradigm.
+ 
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+second application
+\end_layout
+
+\end_inset
+
+
 \end_layout
 
 \begin_layout Subsection
-Graphene Transistors
+Digital Logic
+\end_layout
+
+\begin_layout Standard
+Silicon-based CMOS/MOSFET digital logic is the basis on which much of the
+ modern electronics landscape has been built.
+ From intergrated logic circuits to CPUs, it is hard to overstate how important
+ this technology has proven to be.
+ The need for more powerful devices has increased pressure for smaller and
+ more efficient transistors, such that more can fit into a single device.
+ This progress is typically described by Moore's Law and can be seen graphically
+ in figure 
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "fig:cpu-transistor-number"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+.
+\end_layout
+
+\begin_layout Standard
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
+\begin_layout Plain Layout
+\noindent
+\align center
+\begin_inset Graphics
+	filename moores-law-owid.png
+	lyxscale 20
+	width 80col%
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+The number of transistors in commercial CPUs between 1970 and 2020 
+\begin_inset CommandInset citation
+LatexCommand cite
+key "owidtechnologicalprogress"
+literal "false"
+
+\end_inset
+
+
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:cpu-transistor-number"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+However, as transistors are made smaller, theoretical limits for many limiting
+ factors are approached.
+ In 2015, the ITRS predicted that by 2021 the current push for smaller transisto
+rs would no longer be economically viable, instead requiring innovative
+ 3D device structures
+\begin_inset CommandInset citation
+LatexCommand cite
+key "transistors-21"
+literal "false"
+
+\end_inset
+
+.
+ Some of the most important limiting factors in the current Silicon landscape
+ are short-channel effects, a group of undesirable electrical properties
+ that can occur when the channel length of a MOSFET device is of the same
+ order of magnitude as the depletion layer
+\begin_inset Flex TODO Note (Margin)
+status open
+
+\begin_layout Plain Layout
+cite
+\end_layout
+
+\end_inset
+
+.
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+Limitations of silicon
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+Terahertz switching
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+Electron mobility
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+Thermal conductivity
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+Sensitivity
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+2D channel
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+Short channel effects
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+Hard to turn off, low on-off I multiplier (bandgap stuff)
+\end_layout
+
+\begin_layout Plain Layout
+Need to introduce a bandgap which decimates mobility
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+Hard to fabricate, delamination and stuff
+\end_layout
+
+\end_inset
+
+
 \end_layout
 
 \begin_layout Subsection
@@ -498,8 +749,17 @@ noprefix "false"
 \end_inset
 
 .
- Similarly to the original, the magnitude of the function can be seen to
+ Similarly to the original, the magnitude (figure 
- be between 48 and 63 mS for TTF and CoCp
+\begin_inset CommandInset ref
+LatexCommand ref
+reference "fig:david-magnitude"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+) of the function can be seen to be between 48 and 63 mS for TTF and CoCp
 \begin_inset script subscript
 
 \begin_layout Plain Layout
@@ -527,10 +787,20 @@ noprefix "false"
  the magnitude tends closer to the imaginary component than the real.
  Beyond 100 THz, the imaginary component dips below zero, with a trough
  of -0.5 mS around 250 THz.
- Looking to the phase information, before 10 GHz the phase can be seen to
+ Looking to the phase information (figure 
- be 0, however as the imaginary component begins to peak, the phase increases
+\begin_inset CommandInset ref
- to a max of 90 degrees, continuing until 100 THz where the negative imaginary
+LatexCommand ref
- peak causes the phase to sharply drop to -90 degrees.
+reference "fig:david-phase"
+plural "false"
+caps "false"
+noprefix "false"
+
+\end_inset
+
+), before 10 GHz the phase can be seen to be 0, however as the imaginary
+ component begins to peak, the phase increases to a max of 90 degrees, continuin
+g until 100 THz where the negative imaginary peak causes the phase to sharply
+ drop to -90 degrees.
  There is little difference between the two dopants, they are equal until
  100 THz where the TTF shows a -100 THz offset from the CoCp
 \begin_inset script subscript
@@ -740,6 +1010,14 @@ wide false
 sideways false
 status open
 
+\begin_layout Plain Layout
+\noindent
+\align center
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
 \begin_layout Plain Layout
 \noindent
 \align center
@@ -751,6 +1029,37 @@ status open
 \end_inset
 
 
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:david-magnitude"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
+\begin_layout Plain Layout
+\noindent
+\align center
 \begin_inset Graphics
 	filename ../Resources/david-recreation-phase.png
 	lyxscale 20
@@ -765,7 +1074,30 @@ status open
 \begin_inset Caption Standard
 
 \begin_layout Plain Layout
-Complex conductivity magnitude and phase for TTF and CoCp
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:david-phase"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+Complex conductivity magnitude (a) and phase (b) for TTF and CoCp
 \begin_inset script subscript
 
 \begin_layout Plain Layout
@@ -850,6 +1182,14 @@ wide false
 sideways false
 status open
 
+\begin_layout Plain Layout
+\noindent
+\align center
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
 \begin_layout Plain Layout
 \noindent
 \align center
@@ -861,6 +1201,37 @@ status open
 \end_inset
 
 
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:david-intraband"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
+\begin_layout Plain Layout
+\noindent
+\align center
 \begin_inset Graphics
 	filename ../Resources/david-recreation-inter-mag.png
 	lyxscale 20
@@ -875,7 +1246,30 @@ status open
 \begin_inset Caption Standard
 
 \begin_layout Plain Layout
-Intraband and interband conductivity for TTF and CoCp
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:david-interband"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+Intraband (a) and interband (b) conductivity for TTF and CoCp
 \begin_inset script subscript
 
 \begin_layout Plain Layout
@@ -1186,6 +1580,14 @@ wide false
 sideways false
 status open
 
+\begin_layout Plain Layout
+\noindent
+\align center
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
 \begin_layout Plain Layout
 \noindent
 \align center
@@ -1199,6 +1601,37 @@ status open
 
 \end_layout
 
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:surf-carrier-conc-real"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\noindent
+\align center
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
 \begin_layout Plain Layout
 \noindent
 \align center
@@ -1210,6 +1643,29 @@ status open
 \end_inset
 
 
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:surf-carrier-conc-im"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
 \end_layout
 
 \begin_layout Plain Layout
@@ -1259,7 +1715,7 @@ The conductivity can broadly be seen to follow the same spectral profile
  over the range of carrier concentrations as can be seen in figure 
 \begin_inset CommandInset ref
 LatexCommand ref
-reference "fig:david-simulation-conductivity"
+reference "fig:david-magnitude"
 plural "false"
 caps "false"
 noprefix "false"
@@ -1857,7 +2313,7 @@ m
  figure 
 \begin_inset CommandInset ref
 LatexCommand ref
-reference "fig:david-simulation-conductivity"
+reference "fig:david-magnitude"
 plural "false"
 caps "false"
 noprefix "false"
@@ -1930,6 +2386,14 @@ wide false
 sideways false
 status open
 
+\begin_layout Plain Layout
+\noindent
+\align center
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
 \begin_layout Plain Layout
 \noindent
 \align center
@@ -1941,6 +2405,37 @@ status open
 \end_inset
 
 
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:carrier-conc-intra"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
+\begin_layout Plain Layout
+\noindent
+\align center
 \begin_inset Graphics
 	filename ../Resources/carrier-density/interband-lines-mag.png
 	lyxscale 20
@@ -1955,8 +2450,31 @@ status open
 \begin_inset Caption Standard
 
 \begin_layout Plain Layout
-Inter- and intraband conductivity for high and low carrier concentration
+\begin_inset CommandInset label
- graphene species
+LatexCommand label
+name "fig:carrier-conc-inter"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+Intraband (a) and interband (b) conductivity for high and low carrier concentrat
+ion graphene species
 \begin_inset CommandInset label
 LatexCommand label
 name "fig:inter-intra-carrier-conc"
@@ -2440,6 +2958,14 @@ wide false
 sideways false
 status open
 
+\begin_layout Plain Layout
+\noindent
+\align center
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
 \begin_layout Plain Layout
 \noindent
 \align center
@@ -2451,6 +2977,37 @@ status open
 \end_inset
 
 
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:temp-intra"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
+\begin_layout Plain Layout
+\noindent
+\align center
 \begin_inset Graphics
 	filename ../Resources/temperature/interband-lines-mag.png
 	lyxscale 20
@@ -2465,8 +3022,31 @@ status open
 \begin_inset Caption Standard
 
 \begin_layout Plain Layout
-Inter- and intraband conductivity for low, room and high temperature graphene
+\begin_inset CommandInset label
- using TTF doping
+LatexCommand label
+name "fig:temp-inter"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+Intraband (a) and interband (b) conductivity for low, room and high temperature
+ graphene using TTF doping
 \begin_inset CommandInset label
 LatexCommand label
 name "fig:inter-intra-temperature"
@@ -2620,6 +3200,14 @@ wide false
 sideways false
 status open
 
+\begin_layout Plain Layout
+\noindent
+\align center
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
 \begin_layout Plain Layout
 \noindent
 \align center
@@ -2633,6 +3221,37 @@ status open
 
 \end_layout
 
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:surf-scatter-intra"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\noindent
+\align center
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
 \begin_layout Plain Layout
 \noindent
 \align center
@@ -2644,6 +3263,29 @@ status open
 \end_inset
 
 
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:surf-scatter-inter"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
 \end_layout
 
 \begin_layout Plain Layout
@@ -2710,6 +3352,14 @@ wide false
 sideways false
 status open
 
+\begin_layout Plain Layout
+\noindent
+\align center
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
 \begin_layout Plain Layout
 \noindent
 \align center
@@ -2721,6 +3371,37 @@ status open
 \end_inset
 
 
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+\begin_inset CommandInset label
+LatexCommand label
+name "fig:scatter-intraband"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\begin_inset Float figure
+wide false
+sideways false
+status open
+
+\begin_layout Plain Layout
+\noindent
+\align center
 \begin_inset Graphics
 	filename ../Resources/scatter-lifetime/interband-lines-mag.png
 	lyxscale 20
@@ -2735,8 +3416,31 @@ status open
 \begin_inset Caption Standard
 
 \begin_layout Plain Layout
-Inter- and intraband conductivity with 3 different scattering times for
+\begin_inset CommandInset label
- graphene using TTF doping
+LatexCommand label
+name "fig:scatter-inter"
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Plain Layout
+\begin_inset Caption Standard
+
+\begin_layout Plain Layout
+Intraband (a) and interband (b) conductivity with 3 different scattering
+ times for graphene using TTF doping
 \begin_inset CommandInset label
 LatexCommand label
 name "fig:inter-intra-scatter-lifetime"
@@ -3155,6 +3859,32 @@ From the presented trends for how conductivity is affected by a varied carrier
  lifetime.
 \end_layout
 
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+Equation analysis
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
+\begin_layout Standard
+\begin_inset Flex TODO Note (inline)
+status open
+
+\begin_layout Plain Layout
+Why?
+\end_layout
+
+\end_inset
+
+
+\end_layout
+
 \begin_layout Section
 Conclusion
 \end_layout